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LH28F040SUTD-Z4 - 4M (512K 8) Flash Memory 4M (512K × 8) Flash Memory

LH28F040SUTD-Z4_1896229.PDF Datasheet


 Full text search : 4M (512K 8) Flash Memory 4M (512K × 8) Flash Memory


 Related Part Number
PART Description Maker
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
Spansion, Inc.
SPANSION LLC
AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R 8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
W39V040FAT W39V040FAQ W39V040FAP 512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE 512K X 8 FLASH 3.3V PROM, 11 ns, PQCC32
http://
Winbond Electronics, Corp.
Winbond Electronics Corp
W39V040FC W39V040FCP W39V040FCPZ W39V040FCQ W39V04 512K X 8 FLASH 3.3V PROM, 11 ns, PDSO32
512K 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
WINBOND ELECTRONICS CORP
W39V040A W39V040AQ W39V040AP 3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
512K 】 8 CMOS FLASH MEMORY WITH LPC INTERFACE
Winbond Electronics
WINBOND[Winbond]
AM29LV004BT-80FE AM29LV004BB-80EI AM29LV004BT-80FC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 80 ns, PDSO40
512K X 8 FLASH 3V PROM, 70 ns, PDSO40
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
SPANSION LLC
MX29LV800CTXHC-90 MX29LV800CTXHC-90G MX29LV800CBXH 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PBGA48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO44
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电V时仅闪存
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO44
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PBGA48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
AM29F040B-120EF AM29F040B-120EK AM29F040B-120ED AM 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位)的CMOS 5.0伏只,统一部门快闪记忆
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
LH28F400SUB-Z0 4M (512K 8, 256K 16) Flash Memory 4分(12k56K6)快闪记忆体
4M (512K × 8, 256K × 16) Flash Memory
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
A29040AL-55 A29040AL-70 A29400UV-70 A2918EWH A2918 512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
Dual full-bridge PWM motor driver
AMIC Technology
Allegro MicroSystems
AT49F008A-90CC AT49F008A-90CI AT49F008A-90TC AT49F 90ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
70ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
120ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
x8 Flash EEPROM x8闪存EEPROM
x8/x16 Flash EEPROM
Atmel, Corp.
 
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